Setup for high-temperature processing of silicon carbide
DOI:
https://doi.org/10.24136/jaeee.2025.013Keywords:
annealing, doping, pyrometric measurement, thermal processing, silicon carbideAbstract
This work outlines the conditions and requirements for high-temperature processes used in the fabrication of silicon carbide based semiconductor structures. A dedicated setup was developed by adapting the VLS10/18 system to perform thermal processes at temperatures exceeding 2000°C. Comprehensive characterization confirmed the system's ability to maintain controlled conditions suitable for post-implantation annealing and thermal diffusion of dopants in monocrystalline SiC. The study also verified the accuracy of pyrometric temperature measurements and examined the heating and cooling dynamics of the reactor.
References
Mokhov E. N. (2019) “Doping of SiC Crystals during Sublimation Growth and Diffusion”. In: Crystal Growth, InTechOpen, Rijeka, http://dx.doi.org/10.5772/intechopen.82346
Pelleg, J. (2016). “Diffusion in Silicon Carbide (Carborundum)”. In: Diffusion in Ceramics. Solid Mechanics and Its Applications, vol. 221 Springer, http://doi.org/10.1007/978-3-319-18437-1_12
Zippelius B.; Suda J; Kimoto T. (2012) “High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime” J. Appl. Phys. 111, 033515, https://doi.org/10.1063/1.3681806
Roccaforte, F.; Fiorenza, P.; Vivona, M.; Greco, G.; Giannazzo, F. (2021) “Selective Doping in Silicon Carbide Power Devices”. Materials, 14, 3923, https://doi.org/10.3390/ma14143923
Kamiński, M.; Król, K.; Kwietniewski, N.; Myśliwiec, M.; Sochacki et al. (2025) „The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap”. Materials, 18, 12, https://doi.org/10.3390/ma18010012
Calabretta, C.; Agati, M.; Zimbone, M.; Boninelli, S.; Castiello et al. (2019) “Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers”. Materials, 12, 3362, https://doi.org/10.3390/ma12203362
Zekentes, K.; Vasilevskiy, K. (2020) “Advancing Silicon Carbide Electronics Technology II Core Technologies of Silicon Carbide Device Processing”. Materials Research Forum LLC: Millersville, PA, USA; ISBN 978-1-64490-066-6, http://10.21741/9781644900673
Rambach, M.; Bauer, A.J.; Ryssel, H. (2008) “Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide”. Phys. Status Solidi B, 245, 1315–1326, https://doi.org/10.1002/pssb.200743510
Zhang, S.; Fu, H.; Li, T.; Fan, G.; Zhao, L. (2023) “Study of Effect of Coil Movement on Growth Conditions of SiC Crystal”. Materials 16, 281, https://doi.org/10.3390/ma16010281
Cichoň S.; Macháč P.; Fekete L.; Lapčák L. (2016) “Direct microwave annealing of SiC substrate for rapid synthesis of quality epitaxial graphene”, Carbon Volume 98, 2016, Pages 441-448, ISSN 0008-6223, https://doi.org/10.1016/j.carbon.2015.11.023
Kubiak, A.; Lisik, Z; Raj, E. (2022) “CAD Approach to Control High-Temperature Processes in SiC Technology”. Electronics, 11, 768, https://doi.org/10.3390/electronics11050768
Pokryszka P.; Wośko M.; Paszkiewicz R. (2019) „Pomiary in-situ jednorodności temperatury i ex-situ grubości osadzonej warstwy w systemie epitaksjalnym AIXTRON CCS 3 x 2’’, Przegląd Elektrotechniczny, ISSN 0033-2097, r 95, nr 10/2019, http://pdoi:10.15199/48.2019.10.40
Downloads
Published
Issue
Section
License
Copyright (c) 2025 Journal of Automation, Electronics and Electrical Engineering
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
